excitonic

excitonic

1. (b)Exciton binding energy as afunction of barrier thicknessLAlGaN.

(b)激子结合能随势垒层厚度LAlGaN的变化。

2. Because the energy of photo emission at 330nm is much larger than the band gap energy of ZnO, so it can’t be the result of exciton recombination radiation;

330nm发射峰的能量大于氧化锌的禁带宽度，排除了激子复合的可能。

3. The excitonic superconductor proposed by Allender, Bray and Bardeen is a kind of Layered Ultrathin Coherent Structure (LUCS) composed of metal and semiconductor layers.

Allender,Bray和Bardeen建议的激子超导体是由金属和半导体构成的一种多层超薄共格结构(LUCS)。

4. THE TEMPERATURE DEPENDENCE OF THE FRANKEL EXCITON EFFECTIVE MASS

Frankel激子的有效质量与温度的关系

5. Exciton Localization in Corrugated GaAs/AlAs Superlattices Grown on (311) GaAs Substrates

GaAs/AlAs波纹超晶格中的激子局域化研究

6. Exciton Binding Energy and Exciton Oscillator Strength of GaN-based Quantum-well Structure

GaN基量子阱激子结合能和激子光跃迁强度

7. Excitonic transition and optical property of GaN-based quantum wells

GaN基量子阱的激子跃迁和光学性质

8. Behavior of Exciton in a PtI Complex in Electric Field

PtI化合物激子的静电场行为

9. Specially,an abnormal dispersion phenomena of surface eciton polaritons near the Exciton resonance frequeney is found.

Queisser的错误结果,发现在激子共振频率附近表面激子极化激元存在异常色散的现象。

10. Spectroscopic ellipsometry indicates that the quantum effect of ZnO quantum dot leads to the fact that the absorption energy of exciton(3.76 eV) is bigger than the band gap of bulk ZnO.

SE表征发现ZnO量子点的量子效应导致了ZnO量子点的激子吸收能(3.76eV)比ZnO体晶的能带隙(3.37eV)大。

11. Keywords STM imaged;exciton dynamics;surface adsorbation;

STM图象;激子动力学;表面吸附;

12. Wurtzitic ZnO is a wide-bandgap semiconductor, it’s bandgap is 3.37eV at room temperature and its excitonic bound energy is 60meV.

ZnO 的室温禁带宽度为3.37eV，激子束缚能为60meV（远大于室温 的热能26meV），具备实现室温的紫外受激辐射的条件。

13. As a wide-band semiconductor,ZnO can be used for blue-green,blue and ultraviolet light-emitting devices,owing to its large exciton binding energy and large band width which equals to the wavelength of UV light.

ZnO 的禁带宽度对应于紫外光的波长, 可用于制作蓝绿光、蓝光、紫外光等多种发光器件。

14. Wurtzite ZnO is a wide-bandgap semiconductor, whose band-gap energy is 3.37eV at room temperature and exciton binding energy is 60meV.

ZnO的室温禁带宽度为3.37eV，激子束缚能为60meV，具备实现室温的紫外受激辐射的条件，因此已经成为紫外光电子材料和器件研究领域的热点之一。

15. Calculation of exciton energies and binding energies in ZnO film

ZnO薄膜的激子能量和束缚能的计算

16. Electronic States and the Core Exciton of Superlattice ZnSe/GaAs

Znse/GaAs超晶格的电子态和芯态激子

17. THE VIBRATION-QUENCHING OF THE EXCITON AND THE HUANG-RHYS FACTOR IN THE QUASI ONE-DIMENSIONAL ANTIFERROMAGNET CMC

一维反铁磁体二水CsMnCl_3中激子的振动猝灭和黄昆-Rhys因子

18. Binding Energy of an Exciton in the Ternary Mixed Crystal

三元混晶中激子的结合能

19. triple-state exciton

三线态激子

20. triplet exciton

三重激子

21. The experiments under various excitation power showed that these light emissions are characteristic of self-trapped exciton emission.

不同强度激发发光光谱实验发现，这三个发光带都具有自陷激子发光特征。

22. Dynamics of excitonic entanglement in a system of two quantum dots coupled to cavity field

与腔场耦合的两个量子点中激子的纠缠动力学

23. neutral donor bound exciton

中性施主约束激子

24. neutral bound exciton

中性约束激子

25. Yang Hong-tao, Eerdunchaolu1, JI Wen-hui. The influence of the polaron effects on the properties of strong-coupling interface exciton in polar crystals. Chin. J. Lumin ., 28 （ 5 ）：（ 2007 ） . （待发表）

乌云其木格，杨洪涛，额尔敦朝鲁，磁场对抛物量子点中极化子内部激发态的影响，固体电子学研究与进展，27（4）：（2007）。（待发表）

26. Dynamic behaviours of an exciton confined in coupled quantum dots driven by an alternating current electrical field

交变电场驱动下耦合双量子点中激子的动力学行为

27. The resent development of exciton in quantum dots is introduced,quasiparticles known as excitons become promising subjects for realizing quantum computing in solid state.

介绍了量子点中激子在量子信息中的最新发展,在纳米结构中的准粒子激子已经成为极有应用前景的发展目标。

28. The resent development of exciton in quantum dots is introduced, quasiparticles known as excitons become promising subjects for realizing quantum computing in solid state.

介绍了量子点中激子在量子信息中的最新发展，在纳米结构中的准粒子激子已经成为极有应用前景的发展目标。

29. Energy Level Width of Exciton with Oval Orbit in Mesoscopic System

介观系统具有椭圆轨迹激子的能级宽度

30. Effects on exciton confinement and energy transfer in nano-line of low dimension polymer

低维聚合物纳米线中的激子限域和能量传递效应研究

31. trapped exciton

俘获激发子

32. There is a trade-off for excitonic entanglement when cavity field is initially prepared in the even-coherent state.

偶相干态时，激子的纠缠度呈现一个转折变化。

33. This redistribution of light will have a direct effect on the light absorption and the following exciton production and on the number of final free carriers that are collected by electrodes.

光在有机多层膜中的重新分布直接影响光在有机材料中的吸收和激子的产生，最终影响到可获得的自由载流子的量。

34. The spectrum variation is due to the exciton ionization in electric field.

光谱由红变蓝的根源是激子的电场离化。

35. Keywords conjugated polymers;photoluminescence;intrachain exciton;interchain exciton;

共轭聚合物;光致发光;链内激子;链间激子;

36. Keywords exciton;strong-coupling;self-trapping energy;induced potential;

关键词激子;强耦合;自陷能;诱生势;

37. The peak positions of the exciton emission lines in the PL spectra correspond quite well to the energies of the fundamental transition determined by SPS and CER data.

再比较PL的峰值讯号和SPS的谱线所得到的跃迁讯号后发现是相当吻合。

38. molecular exciton microscopy

分子激子显微术

39. The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements.

利用反射及光激萤光量测能隙边缘的激子跃迁。

40. Coupling between cavity mode and heavy-hole exciton and light-hole exciton in semiconductor microcavity

半导体微腔中腔模、重空穴激子模和轻空穴激子模耦合

41. Properties of Weak-coupling Exciton in Polar Semiconductor Quantum Dot

半导体量子点中弱耦合激子的性质

42. EFFECTS OF QUANTUM DOT SHAPE ON EXCITONIC STATES

半导体量子点的形状对受限激子的影响

43. double acceptor bound exciton

双受主约束激发子

44. two-mode exciton

双模激子

45. Dynamical Localization of an Exciton Confined in Two Quantum Dot Molecular Driven by an AC Electric Field

双量子点分子中激子的动态局域化行为

46. diamagnetic exciton

反磁激子

47. Keywords ZnO;Luminescence;Exciton emission;Native defect emission;Energy transfer;

发光;激子发射;本征缺陷发射;能量传递;

48. State-filling effects of exciton in quantum dot array are observed.

发现许多正负折射交替一维光子晶体新特性。

49. An Investigation of the Factors Affecting Quantum Size Effects of the Confined Exciton Ground State Energy in the Semiconductor Quantum Dots

受限激子基态能量量子尺寸效应有关问题的探讨

50. Keywords circular dichroism;exciton coupled circular dichroism;absoute configuration;

圆二色谱;激子手性法;绝对构型;

51. Blue shift appears on the absorb edgea in the absorption spectrum and also on the exciton band edge emission peaks in the luminescence spectrum.

在光致发光谱中,不仅激子直接复合产生的带边发射产生了蓝移,而且陷阱态复合产生的宽带发射也发生了蓝移.

52. Dynamic behaviours of an exciton confined in coupled quantum dots driven by a high alternating current electrical field

在强交变电场驱动下线形三量子点分子中激子的动态局域化行为

53. In this letter, to include the dopant effects, a “double-layer” model is proposed for describing the exciton diffusion in doped and pure layers separately.

在本文中，通过分析掺杂层对激子扩散的影响，建立双层模型，以系统地描述激子在主体材料层和掺杂层中的浓度分布。

54. multiple exciton generation

多激子产生

55. The Exciton Absorption and Light Modulation Characteristics of MQW Light Switch Devices

多量子阱光开关器件的激子吸收及光调制特性

56. frenkel exciton

夫伦克尔激子 夫伦克耳激子

57. room-temperature exciton

室温激子

58. ZnO semiconductor is a good material with much application in photoelectricity device due to its wide gap of 3.37eV and large exciton binding energy of 60meV.

宽禁带ZnO半导体为直接带隙，室温带隙为3.37eV，且束缚激子能高达60meV，是一种具有很大潜在应用价值的紫外半导体光电器件材料。

59. The results show that the exciton binding energy decreases as the dot radius increases for infinite confining well model.

对于有限深势阱模型，当量子点半径较小时，束缚能随着量子点的半径增加而增加；

60. negatively charged exciton

带负电荷激子

61. Model for exciton absorption in optical microcavity was built and programe of simulation of reflectivity and cavity mirror design were written.The optimal parameters for optical microcavity was given.

建立了微腔中激子光吸收的理论模型，编写出了微腔激光器腔镜设计和模拟反射光谱的程序，给出了光学微腔设计的优化参数；

62. Keywords open-chain stability;exciton;optical absorption band of exciton;numerical simulation;

开链稳定性;激子;激子吸收峰;自洽变分数值计算法;

63. Research Progress of Excitonic Luminescence in Zinc Oxide[J].

引用该论文 Tan Tianya,Chen Junjie,Jiang Xue.

64. Preparation of SnO2Nanometer Crystallites and Study of the Optical Propertier of Their Exciton States[J].

引用该论文 余保龙,张桂兰,汤国庆,邹炳锁,陈文驹.

65. Phase Relaxation of Frenkel Exciton Migration in the Nanostructure Mixed Molecular Aggregates[J].

引用该论文 刘俊业,郑植仁,刘春旭,窦恺,黄世华,虞家琪.

66. Excitonic absorption spectra of ZnSe-ZnS strained-layer superlattlces[J].

引用该论文 沈爱东,陈云良,王海龙,王之江,吕少哲.

67. New progress of exciton condensation in coupled quantum wells[J].

引用该论文 闫占彪,郭震宁.

68. The Ground State Effective Hamiltonian of the Strong Coupling One-Dimensional Optical Exciton

强耦合一维激子的基态有效哈密顿量

69. strong-coupling exciton

强耦合激子

70. Properties of Internal Excited State of the Strong Coupling Surface Exciton

强耦合表面激子内部激发态的性质

71. Various static and dynamic effects such as soliton excitations, polaron excitations, exciton self-trapped and nonlinear breathers are observed in the simulation.

我们发现束缚的激子状态或束缚的孤子-反孤子状态为长链反式聚乙炔之光激发态分子动力学的主要机制。

72. vibration-age could eliminate remaining stress of work piece by making use of period force made by exciton machine on the condition of low frequency.

振动时效借助激振器产生的周期力,使工件在低频下共振,从而消除和均化了残余应力。

73. Mechanism on Energy Transfer of Photoluminescence Exciton in Erbium Doped Silicon

掺铒硅光致发光激子传递能量机制

74. Organic electrophosphorescent devices can be used to circumvent the limitation in quantum efficiency of organic electroluminescent devices due to the spin-forbidden of triplet exciton transition.

摘要有机电致磷光器件的设计和利用，可以突破由三线态激子跃迁自旋禁阻引起的有机电致荧光器件量子效率的限制。

75. The relation between the exciton binding energy and the spherical quantum dot radius has been calculated using the variational method.

摘要用无限深势阱和有限深势阱2种模型，计算了激子束缚能与球形量子点半径的关系。

76. donor bound exciton

施主受约束激励

77. From the time resolved photoluminescence spectra (TRPL),the lowest exciton emission luminescence peak of high luminescence efficiency and its fluorescence lifetime which was 28.5 ps fitted by tail fit were obtained.

时间分辨荧光光谱(TRPL)中观察到发光效率高的最低激子发射峰,并测量其荧光衰减寿命,经尾部拟合为28 .5 ps.

78. Keywords rganic molelule exciton carrier;

有机分子;激子;载流子;

79. Keywords organic semiconductor;solar cell;transient photovoltage;power conversion efficiency;lifetime;interface;exciton;buffer layer;UV-Vis absorption spectrum;

有机半导体;太阳能电池;瞬态光电压;能量转换效率;寿命;紫外-可见吸收光谱;界面;缓冲层;激子;

80. Keywords Organic semiconductor;Charge transfer;Charge transfer exciton;Electron transfer;

有机半导体;电荷转移;电荷转移激子;电子转移;