mosfet

mosfet

1. Responsibilities:- You will be involved in the characterization and modeling of devices such as MOSFET using models such as BSIM3v3, BSIM4, and bipolars using the Gummel Poon models.

- 承担器件参数测试及spice 建模工作。主要模型有 MOSFET 管的BSIM3v3, BSIM4, 双极管Gummel Poon 等等.

2. 1000V MOSFET IMPLEMENTED USING CONVENllONAL LOW-VOLTAGE TECHNOLOGY

1000VMOSFET用常规低压工艺的实现

3. The Theoretical and Experimental Study for 4H-SiC Buried-channel MOSFET

4H-SiC隐埋沟道MOSFET理论和实验研究

4. Allegro's A3901 offers a very small package size, low operating voltage and low voltage drop MOSFET outputs.

Allegro的A3901具有小巧精致的封装尺寸,低工作电压和低电压降MOSFET输出的特性。

5. Threshold Voltage of Flotox MOSFET in EEPROM

EEPROM中浮栅MOS晶体管阈值电压的研究

6. A higher-voltage ,low-switching frequency IGBT inverter and a lower-voltage, high-switching frequency MOSFET inerter are used in the combination to achieve harmonic current compensation.

IGBT逆变器的作用是提供基波电压,并补偿无功功率,MOSFET逆变器则实现消除谐波电流的功能。

7. The compositive type IC such as MOSFET and IGBT, can reduce package number, reduce total cost, simplify ballast design, reduce switch loss, promote tone light energy force.

MOSFET 和 IGBT 等集成式IC，可削减组件数目、降低总体本钱、简化镇流器设计、降低开关损耗，并晋升调光能力。

8. MOSFET transconductances are the basic resistive structures of MOSFET-C contin-

MOSFET 金属氧化物半导体场效应晶体管跨导结构是全集成 MOSFET-C连续时间滤波器的基本电阻结构.

9. Junction temperatures within the MOSFET and the coefficients of conduction of the MOSFET package and heat sink are other important characteristics of PMDC motors.

MOSFET中结点的温度、MOSFET封装和散热片的传导系数是PMDC电动机的其它重要的特征。

10. parallel MOSFET

MOSFET并联

11. Computation of Transient Magnetic Energy Density of the Commuting Process for MOSFET Converter Circuits

MOSFET开关变换电路换流过程的瞬态磁场能量密度的计算

12. MOSFET switch tube

MOSFET开关管

13. Electrical Characteristics Analysis of MOSFET under Strong Surface Electric Field

MOSFET强表面场电学特性分析

14. The optinal parameter extraction for MOSFET model in the whole region

MOSFET模型参数的全域优化提取

15. MOSFET Model and MUX/DEMUX Circuits Design

MOSFET模型及MUX/DEMUX电路设计

16. HIGH-FREQUENCY THERMAL NOISE IN MOSFET

MOSFET的高频热噪声

17. substrate bias effect of MOSFET

MOSFET衬偏效应

18. The Effect of MOSFET Output Impedance on Linearity in the CMOS Gilbert Mixer

MOSFET输出阻抗对混频器线性度影响分析

19. MOSFET comes with the irregualr heatsink, looks like 11 Phases, but I can not give more details on that.

MOSFET部份则用不规则散热片加上，看起来是11相电源供电，不过这边不多做臆测。

20. MOSFET driver circuit

MOSFET驱动

21. MOSFET driver

MOSFET驱动器

22. MOSFET drive circuit

MOSFET驱动电路

23. MOSFET (or IGBT)

MOSFET（或IGBT）

24. AUTOMATIC EXTRACTION OF MOSFET D.C. MODELING PARAMETERS USE COMPUTER

MOS场效应管直流模型参数的计算机自动提取

25. ERROR ANALYSIS OF MOSFET SWITCH TRANSMITTING AC SIGNALS

MOS开关传输交流信号的误差分析

26. Study of Hot-Carrier Effect in Short Channel DD MOSFET

NMOS短沟DD结构热载流子效应的研究

27. p-channel MOSFET

p 沟道 MOSFET

28. Study of power MOSFET under irradiation condition

P沟道和N沟道MOS场效应管的辐照实验研究

29. SJ MOSFET is a new development power MOSFET based on the combination of VDMOS and SJ (Super Junction), and called the new milestone of power MOSFET.

SJ MOSFET是由VDMOS结构与超结(SJ)相结合而发展起来的一种新型的功率MOSFET,被称为功率MOSFET的里程碑,有广阔的发展前景,目前在国内尚无产品开发。

30. Development of floating body effect in SOI MOSFET's

SOI器件中浮体效应的研究进展

31. Hu Zongbo,Zhang Bo.Study on bi-directional conductibility and power loss of power MOSFET in synchronous rectifier[J].Proceedings of the CSEE,2002,22(3):88-93.

[2]胡宗波,张波.同步整流中MOSFET的双向导电性和整流损耗分析[J].中国电机工程学报,2002,22(3):88-93.

32. Hu Zongbo, Zhang Bo.Study on bi-directional conductibility and power loss of power MOSFET in synchronous rectifiers[J].Proceedings of the CSEE, 2002, 22(3): 88-93.

[3]胡宗波,张波.同步整流器中MOSFET的双向导电特性和整流损耗研究[J].中国电机工程学报,2002,22(3):88-93.

33. The following study discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD.

一个系统不管初始状态为何，如果能够保证在有限的执行步骤后达到稳定状态，我们便称此系统为自我稳定系统。

34. Structure and Technology of a Vertical Multiple-Gate MOSFET Based on Bipolar Technology

一种基于双极工艺的纵向多面栅MOSFET的结构与工艺

35. A Sensitive Testing Technique to ESD Latent Damages in MOSFET

一种敏感的MOSFET ESD潜在损伤检测方法

36. An Economical and Practical Power MOSFET if Converter

一种经济实用的功率MOSFET中频逆变电源

37. The main products include IGBT Module, IPM Module, MOSFET Module, Thyristor Module and Diode Module.

三菱电机的主要产品包括IGBT模块，IPM模块，MOSFET模块，晶闸管模块和二极管模块等。

38. Stress Induced Leakage Current in Different Thickness Ultrathin Gate Oxide MOSFET

不同厚度超薄栅氧化物MOSFET的应力诱导漏电流

39. MOSFET output stages substantially reduce the voltage drop and the power dissipation of the outputs of the A3901 compared to typical drivers with bipolar transistors.

与带双极转换器的典型驱动器相比,MOSFET输出级可大幅降低A3901的电压降和输出功率耗散。

40. In recent years, in order to promote the MOSFET s frequency and performance, the dimension keeping scale down, we can get more transistors in the same area.

中文摘要近年来，为了提升金氧半场效电晶体工作频率及性能，尺寸不断微缩，让相同面积晶片可以拥有更多的电晶体数量。

41. The capacitor is charged by controlling a MOSFET, it then would discharge by controlling a GTO in a short time.In order to ensure full charge, there is a period of time between the cont...

为了保证充电充分,在控制充放电脉冲之间加一段时间间隔,实现中给出了本设计的具体操作,最后得出电源电压与产生电流之间的关系。

42. Our products include LINEAR IC, TRIODE, SCR, TRIAC ,CMOS and MOSFET, involving many parts of household electric appliance.

主要产品有通用的线性IC、三极管、可控硅、CMOS、MOSFET(低压/高压），产品涉及大部分家用电器。

43. Our products include LINEAR IC, TRIODE, SCR, TRIAC， CMOS,MOSFET（high voltage/low voltage), involving many parts of household electric appliance.

主要产品有通用的线性IC、三极管、可控硅、CMOS、MOSFET(低压/高压），产品设计大部分家用电器。

44. Products include: IGBT, PIM, IPM, Rectifier Bridge, fast diode, MOSFET, driver circuit, optocoupler, current sensors, such as electrolytic capacitors.

产品包括：IGBT、PIM、IPM、整流桥、快速二极管、MOSFET、驱动电路、光耦、电流传感器、电解电容等。

45. Introduce the principle of MOSFET AC square wave inverter power source.

介绍了MOSFET交流方波逆变电源的工作原理。

46. The inverter versatile arc welding machine is introduced.The structure of the main circuit is made up of MOSFET and ferrite magnetic core.

介绍了一种主电路采用MOSFET和铁氧体磁芯构成单端正激的逆变式多功能焊机;

47. Single flyback converter circuit, as well as the PWM signal, is used to control the MOSFET.

使用单端反激变换器电路，用PWM信号控制开关管MOSFET。

48. The power source used 14 power file effect transistor MOSFET in power transformer second order;all the combinations of twist-coil could construct 18 different second orders.

供电电源则将14只功率场效应晶体管MOSFET接入电源变压器次级,两绕组的全部组合可构成18个不同扎数的次级。

49. The LDB was divided into regions of PNP and MOSFET, then region MOSFET was subdivided further.

先将LDB分为PNP和MOSFET两个区域，再将MOSFET区细分为两个区。

50. A Novel Analytical Model for Thin Film Fully Depleted Buried N-Channel SOI/SDB MOSFET (SOI/SDB FD BC NMOSFET)

关于SOI/SDB薄膜全耗尽隐埋N沟MOSFET的新型解析模型

51. Keywords: N channel MOSFET; H bridge; PWM control; charge pump; power amplification; DC motor

关键词:N沟道增强型场效应管;H桥;PWM控制;电荷泵;功率放大;直流电机

52. Keywords microsecond level pulse chopper device;MOSFET;pulse electrochemical polishing;pulse width;

关键词微秒级脉冲斩波器;MOSFET;脉冲电化学抛光;脉冲宽度;

53. Keywords Bluetooth Transceive,CMOS Low-Noise Amplifier,S-Parameter Sub-Micron MOSFET,High-Frequency Noise,Impedance Match;

关键词蓝牙收发机;CMOS低噪声放大器;亚微米MOSFET;高频噪声;S参数;阻抗匹配;

54. Main circuit uses independent RC pulse generator and control circuit can control the main circuit based on 8051 single chip microcomputer and TC4427 high-speed power MOSFET driver.

其主电路采用了独立式RC脉冲放电回路,控制电路则通过8051单片机和TC4427高速MOSFET驱动器完成对主电路的控制。

55. The other input is derived from a 256R resistor ladder, which is tapped by a MOSFET transistor switch tree.

其他投入来自256R电阻阶梯，这是利用了晶体管的开关MOSFET的树。

56. Skilled with MOSFET device engineering, especially in its reliability and performance aspects.

具有MOSFET元件工程技能，其中，尤其著重于可靠度及高效能方面.

57. PWM microelectronic c ontrol technique and AC DC AC DC invert technique with MOSFET half bri...

具有短接限流、限时衰减和恒流、恒压相结合的特点。

58. Aiming at the question of applying MOSFET,synchronized trigger circuit of paralleling grid electrode with high-power pulse is designed.

分析了MOSFET应用时存在的问题,并提出并联栅极强脉冲同步触发的解决方案。

59. Modeling of power MOSFET for conducting EMI analysis

分析传导EMI的功率MOSFET建模

60. The satisfactory tests of arc-ignition and good properties of welding process may prove this switched MOSFET arc welding power source to be an electronic power source with broad prospects.

利用所研制的开关式场效应管弧焊电源进行引弧试验和工艺试验,结果表明,此电源具有良好的引弧性能和工艺性能,是一种发展前景较远大的电子弧焊电源。

61. power MOSFET

功率MOSFET

62. Keywords power MOSFET;current controller;magnetorheological damper;

功率MOSFET;电流控制器;磁流变阻尼器;

63. Study of Heel Crack in the Lead-Free Soldering for Power MOSFET Package

功率MOSFET无铅化封装中铝线引脚跟断裂研究

64. The power MOSFET suffers a peak current of IIN plus IF and a peak voltage of VIN plus VO.

功率MOSFET要承受一个峰值为IIN加上IF的电流还有一个峰值为VIN 加上 VO的电压。

65. power MOSFET gate drive circuit

功率场效应晶体管栅极驱动电路

66. A high quality power module manufacturer (IGBT, MOSFET, Rectifier), specializing in providing high quality products and power management solutions for customers.

功率模块(IGBT，MOSFET，整流桥)的专业制造商，专注于为用户提供高品质的功率模块产品和解决方案。

67. Dynamic threshold MOSFET (DTMOS)

动态阈值场效应管

68. North American had developed a desktop calculator based on a MOSFET chip for use by its legions of engineers.

北美人航空曾经为其工程师制造过一种基于MOSFET的桌面计算器。

69. Hot carrier injection (HCI) test of the MOSFET devices, electron migration (EM) test of the metal interconnects and gate oxide integrity (GOI) test are the most popular WLR test items.

半导体集成电路的晶圆级可靠性的主要测试项目包括MOS器件的热载流子注入测试、栅氧化层完整性测试以及金属互连线的电迁移测试。

70. Effect of Bipolar Turn-On on the Static Current-Volt age Characteristics of Power Vertical Double Diffused MOSFET

双极晶体管导通状态对功率纵向双扩散MOSFET静态电流-电压特性的影响

71. Utilizing Dual-Gate MOSFET as mixer in phase laser range finder

双栅场效应管混频器在相位法激光测距中的应用

72. dual gate mosfet

双栅极金属氧化物硅半导体场效应晶体管

73. Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

双栅肖特基源漏MOSFET的阈值电压模型

74. Dual-Channel MOSFET Sub-Microsecond Micro-Energy Pulse Power Source Used in Electrical Discharge Machining

双路绝缘栅型场效应管亚微秒级电火花脉冲电源

75. Typical drain-source voltage of the MOSFET in a flyback

反激变换器的典型漏源极电压

76. The company after incorporating still will surmount two afore-mentioned manufacturers, become the biggest power MOSFET supplier.

合并后的公司还将超过上述两家厂商，成为最大的功率MOSFET供给商。

77. Substrate bias control of the synchronous rectifier mosfet for boost converter

同步整流升压电路中整流管的衬底电位控制

78. SiC compensated by lower MOSFET losses due to the GaAs lower junction capacitance.

和碳化硅技术相比,砷化镓有成本和可靠性优势。

79. Study of X-Ray Total Effect in SOI MOSFET

器件X射线总剂量效应研究

80. In Figure 3, the power amplifier comprising the LT1797 high-frequency op amp and MOSFET forces the driven core to precisely cancel CMV as sensed in the ground-reference connection.

图3中，由LT1797高频运放和MOSFET组成的功率放大器驱动核，精确的抵消对参考地连接敏感的CMV。