photoluminescence

photoluminescence

1. Photoluminescence and DLTS Study on Al_X Ga_(1-x) As:Te

Al_x Ga_(1-x)AS:Te的光致发光和DLTS研究(英文)

2. PHOTOLUMINESCENCE OF Eu~(3+) IN Ca_3La_3(BO_3)_5

Ca_3La_3(BO_3)_5中Eu~(3+)的光致发光

3. Photoluminescence Excitation Spectra and Absorption Spectra Analysis of CdSeS Quantum Dots

CdSeS量子点的光吸收谱亚结构和光致发光激发谱分析

4. GREEN ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE IN CdS

CdS单晶中的绿色电致发光和光致发光

5. PHOTOLUMINESCENCE OF Eu~(3+)-ACTIVATED YTTRIUM BORATOVANADATE

Eu~(3+)激活的硼钒酸钇的光致发光

6. Study on Photoluminescence Test for GaAs Layers under External Uniaxial Stress

GaAs结构在单轴加压下的光致发光特性测试

7. A STUDY OF PHOTOLUMINESCENCE OF GaP(N,Te,Zn) UNDER HIGH PRESSURES

GaP(N,Te,Zn)的静压光致荧光研究

8. Photoluminescence of Defects in LEC GaAs

LEC GaAs中缺陷的光致发光研究

9. PHOTOLUMINESCENCE STUDY OF EPITAXIAL CdTe/GaAs GROWN BY MBE

MBECdTe/GaAs光致发光研究

10. LOW TEMPERATURE PHOTOLUMINESCENCE OF Be DOPED GaAs GROWN BY MBE

MBE生长的掺Be p-GaAs的光荧光谱

11. Keywords MEVVA Ion Source;Ion Implantation;Erbium;nc-Si;Photoluminescence;

MEVVA离子源;离子注入;铒;纳米硅;光致发光;

12. Study of 1. 36 eV Photoluminescence Peak in n-Type GaAs

n型砷化镓中1.36eV发光峰的研究

13. TIME RESOLVED PHOTOLUMINESCENCE OF PPV DERIVATIVES/C??60? COMBINATION SYSTEM

PPV衍生物/C_(60)薄膜的时间分辨荧光光谱研究

14. INFLUENCE OF Cc~(3+) AND Bi~(3+) ON Sra~(3+) PHOTOLUMINESCENCE IN REBO_3

REBO_3中Ce~(3+)和Bi~(3+)对Sm~(3+)光致发光的影响

15. Photoluminescence of Nanorods SiC

SiC纳米晶须的光致发光研究

16. SECONDARY ION MASS SPECTROSCOPY AND PHOTOLUMINESCENCE INVESTIGATIONS ON THE GaN EPILAYER GROWN ON Si SUBSTRATE

Si基GaN外延层光致发光光谱与二次离子质谱的研究

17. Study on Photoluminescence Characteristics of an Organic Multiple Quantum Well Structure

一种有机多层量子阱结构能量转移的研究

18. Photoluminescence intensity changes as the function of laser power,and the maximum peak at 412 nm presents blue emission.

不同激光功率下沉积ZnO纳米薄膜经500℃热处理后的PL峰,其强度随激光能量而变化,最大发光波长位于412nm。

19. For electric discharge of through extremely thin, but the coldest high aerosphere, creates in atmospheric the magnificent photoluminescence.

为通过极稀薄而最冷之高气层之放电，造成大气中的瑰丽发光现象。

20. The process of both photoluminescence and electroluminescence,and the property of photoluminescence and electroluminescence on polysilane were introduced.

介绍了光致发光和电致发光的过程及聚硅烷的光致发光和电致发光性的研究进展。

21. The latest results of the photoluminescence spectra of porous silicon by surface passivation and laser dye impregnated in porous silicon were presented in this paper.

介绍了多孔硅经表面钝化后,其发光强度和谱线峰位的稳定性,以及多孔硅激光染料镶嵌膜的荧光光谱等方面的最新成果。

22. Based on the quantum confinement_ luminescence center model, t he relation between the inner electric field( IEF) and the photoluminescence( PL) character is calculated.

从量子限制发光中心模型出发,计算了纳米硅的光致发光(L)征与发光中心间的关系.

23. Keywords photoluminescence;GaAs;MBE;transient measurement;

光致发光;砷化镓;分子束外延;瞬态测量;

24. photoluminescence efficiency curve

光致发光效率曲线

25. photoluminescence characteristic

光致发光特性

26. The photoluminescence (PL) results are affected by the intensity of Xe lamp, temperature and the surface status of films, which decreases the comparability of PL results.

光致发光结果受到氙灯的光强、温度及薄膜表面的平整度等因素的限制，使得结果可比性差。

27. The process of photoluminescence refers to the radioative recombination of electronhole pairs generated by shining high energy light on a crystal.

光致发光过程就是高能量光子照射到晶体上之后，晶体所产生的电子一空穴对的辐射复合过程。

28. photoluminescence(PL) spectra

光致发光（PL）潜

29. photoluminescence enhancement

光致荧光增强

30. ratio of photoluminescence intensity

光致荧光强度比

31. photoluminescence (PL) mapping

光荧光扫描

32. Higher growth temperature of buffer layers can lead to more strongly photoluminescence intensity. b) Effects of treatment processes.

光谱测试表明缓冲层生长温度越高，光致发光强度越强；

33. Si Quantum Dots,Photoluminescence,Luminescence Mechanism,QCE,surface state

关键词：矽量子点,光激发光,发光机制,量子局限效应,表面态

34. Si Quantum Dots,Photoluminescence,Coalesced Si Quantum Dots,White Light,Si:O:H

关键词：矽量子点,光激发光,联结矽量子点,白光,矽:氧:氢氢

35. Other instruments sense a stone's photoluminescence in laser light.

其他仪器则是检测宝石在雷射照射之下发出的冷光。

36. The samples were characterized by X-ray diffraction (XRD), Scanning electronic microscope (SEM), photoluminescence (PL) and X-ray excited luminescence (XEL) spectra.

分别以X-射线衍射(XRD)、扫描电子显微镜(SEM)、光致发光(PL)光谱及X-射线激发的发光(XEL)光谱对样品进行了表征。

37. We extend the use of Raman spectroscopy to investigate the modes of Er-implanted and Er+O co-implanted GaN,and discuss the influence of O ions on Er 3+-related infrared photoluminescence(PL).

利用Raman散射谱研究了GaN注Er以及Er+O共注样品的振动模,并讨论了共注入O对Er离子发光的影响.

38. Using photoluminescence (PL), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy, we have analysed GaAs (100) sarfaces passivated with (NH4)2Sx and P2S5/(NH4)2Sx.

利用光致发光谱、X射线光电子谱和俄歇电子谱等技术研究了(NH_4)_2S_x和P_2S_5/(NH_4)_2S_5化学钝化GaAs(100)表面.

39. The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements.

利用反射及光激萤光量测能隙边缘的激子跃迁。

40. Raman spectra and Photoluminescence spectra are used to investigate the influence of carbon doping on the structural and optical properties of GaN films grown by the hydride vapor phase epitaxy (HVPE).

利用喇曼光谱和光致发光谱 ,对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究 .

41. Characterization on the morphology, particle size and spectrum properties have been done with TEM, UV-vis absorption spectrometer, and Photoluminescence spectra. 2.

利用紫外-可见（UV-vis）吸收光谱、荧光发射(PL)光谱、透射电子显微镜(TEM)等表征手段对得到的荧光半导体量子点进行形貌、大小、结晶性、光谱特性和成份等进行分析。

42. Resonant oavity light emitting diodes(RCLED) of 650 nm wavelength was epitaxied by metal organic chemical vapor deposition(MOCVD),the emission property of photoluminescence(PL) and electro-luminesence(EL) was characterized.

利用金属有机化学气相沉积(MOCVD)方法生长650 nm谐振腔半导体发光二极管(RCLED),利用光致发光(PL)谱和电致发光(EL)谱研究了其发光特性。

43. Nanostructures on silicon are found to contribute to the reduction of the linewidth of its photoluminescence (PL) spectrum under low temperature.

制作不同的矽表面奈米结构，以期在相同温度下达到更窄的频谱线宽，以及更明显的激子局限凝聚效应。

44. photoluminescence of semiconductors

半导体光致发光

45. PHOTOLUMINESCENCE STUDY ON 0.77 eV EMISSION BAND OF SEMI-INSULATING GaAs

半绝缘砷化镓中0.77eV荧光带的研究

46. photoluminescence properties

发光性能

47. Photoluminescence that persists for an extremely short time after excitation.

受激后持续时间很短的光致发光。

48. Keywords 1;3;4-oxadiazole;photoluminescence;electrophosphorescent materials;

口恶二唑;光致发光;电致磷光材料;

49. Polymer light-emitting materials have attracted much interest all over the world because of their high photoluminescence quantum efficiency, easily fabrication, good thermal stability.

同时由于其高的量子效率,工艺简单,热稳定好等特点,在彩色大屏幕平板显示技术领域显示出了广阔的应用前景。

50. Study of photoluminescence and optical absorption from silicon oxide films embedded nanometer silicon particles

含纳米硅粒氧化硅薄膜的光致发光和光吸收研究

51. Photoluminescence Properties of A Series of Novel Copolymers Containing Terbium Complexes

含铽三元共聚物的光致发光性质研究

52. Absorption and photoluminescence spectra show that there are strong interactio n between C 60 molecule and PAN,which depends on the length of PAN chain .

吸收及荧光光谱表明 :C60 分子与聚丙烯腈(PAN)有明显的相互作用 ,而且这种相互作用与 PAN的链长有关。

53. Electroluminescence (EL) spectra of the devices are very similar to photoluminescence (PL) spectrum of the single deposited LiBq_4 film with peak wavelength at 492 nm.

器件的电致发光 (EL)光谱与LiBq4 薄膜的光致发光 (PL)光谱相同 ,峰值波长均为 4 92nm。

54. With the increase of treatment temperature, the emission peaks in photoluminescence spectra of CN powder obtained under the pressure of 5GPa shift to longer wavelength.

在5GPa压力条件下，随处理温度升高，碳氮粉末的荧光发射峰产生红移。

55. Photoluminescence for GaAs/Al0.3Ga0.7As superlattice materials grown by MBE atT= 300 K was measured. Several pesks on the Photoluminescence spectrum were observed.

在室温下,通过光致发光实验研究了用MBE生长的GaAs/Al0.3Ga0.7As超晶格材料的光致发光特性,对测得的发光峰进行了指认。

56. The PL spectrum of Zn_2SnO_4 nanowires at room temperature shows a broad blue emission band centered at a wavelength of 580 nm. 3. Synthsis and photoluminescence properties of Sn:Ga_2O_3 nanostructures.

在室温下的Zn_2SnO_4纳米线光致发光谱显示,该种纳米材料具有一个较宽的发光带,发光峰中心的峰值为580nm。

57. In Chapter 4, the photoluminescence and electroluminescence characteristics of a series of polymer blends based on fluorene-acceptor alternating copolymers were investigated.

在第四章中，吾人探讨由茀-受体杂聚高分子所组成之一系列高分子混掺的萤光与电致发光特性。

58. In this thesis, we report an investigation of two-wavelength excited photoluminescence on InGaN/GaN multiple quantum wells to study the nonradiative defects.

在这一篇论文之中，我们利用双光源激发的萤光光谱法来研究氮化铟镓/氮化镓多重量子井结构中的非辐射缺陷。

59. Photoluminescence Spectra of Tahitian Cultured Black Pearls

塔希提养殖黑珍珠光致发光光谱初探

60. Keywords Tahitian black pearl;photoluminescence spectrum;black pigment;

塔希提黑珍珠;光致发光光谱;黑色有机色素;

61. Compress Full Width at Half Maximum of Porous Silicon Photoluminescence Spectrum

多孔硅光致发光峰半峰全宽的压缩

62. The Multi-peak Structure of Photoluminescence for Porous Silicon

多孔硅光致发光谱的多峰结构

63. Photoluminescence spectra of porous silicon absorbed fluoresce in -sodium

多孔硅吸附荧光素钠的光致发光

64. Photoluminescence Spectra of Laser Dye Embedded in Porous Alumina

多孔铝激光染料镶嵌膜的荧光光谱研究

65. The light emitting diode is comprised of LED frame without a light reflecting cup, semiconductor light emission chip, lead, transparent epoxy, photoluminescence phosphor, and transparent adhesive.

它由不带反光杯的发光二极管支架，半导体发光芯片，导线，透明环氧胶，光致发光荧光粉，以及透明粘接胶构成。

66. The microstructure and photoluminescence of these films were systematically studied by measurements of micro-Raman, photoluminescence (PL) and high resolution transmission microscope (HRTEM).

实验研究了退火前后薄膜样品的结晶状态和光致发光特性。

67. photoluminescence quantum yield

室温光致发光量子产率

68. The room temperature photoluminescence (PL) results indicate that the stress in ELO GaN has been released partially.

室温光荧光结果表明侧向外延法生长的GaN中的晶格失配应力已被部分释放。

69. Photoluminescence Study of Silicon Nitride Films With Different Si-rich Degrees

富硅量不同的富硅氮化硅薄膜的光致发光研究

70. The mechanisms of photoluminescence are introduced, including quantum confinement effect, the defect related oxygen, quantum confinement effect/luminescence center and excition effect model.

并且介绍了单元素半导体量子点的发光机理模型，包括量子限制效应模型、与氧有关的缺陷发光、量子限制效应发光中心复合发光和界面层中的激子效应发光等；

71. The photoluminescence property for the unique PbWO_4 quasi-octahedrons is observed to be significantly different from that for the PbWO_4 pagodas.

并且发现准八面体形状的钨酸铅晶体和宝塔状的钨酸铅晶体的室温光致发光性能有明显的差异。

72. Photoluminescence of ZnO Films Naturally Doped and Codoped with N and Al[J].

引用该论文 傅广生,孙伟,吕雪芹,王春生,尹志会,于威.

73. Photoluminescence of a mono-substituted polyacetylene at low temperatures[J].

引用该论文 周甫方,黄远明.

74. Effect of annealing on photoluminescence of ZnO:Al thin films prepared by sol-gel method[J].

引用该论文 徐自强,邓宏,谢娟,李燕,陈航,祖小涛,薛书文.

75. Study on Photoluminescence from Organic Solutions of Fullerenes[J].

引用该论文 杨小成,方炎.

76. Molecular structure for ZnO and its photoluminescence character[J].

引用该论文 王秋云,谢安东,朱正和.

77. Molecular structure for ZnS and its photoluminescence character under electric dipole field[J].

引用该论文 谢安东,朱正和,王秋云,马美仲.

78. Temperature Effect of Deep Center-Related Photoluminescence in GaAs Thin Films Grown on Si Substrates[J].

引用该论文 赵家龙,高瑛,刘学彦,窦恺,黄世华,虞家琪,梁家昌,高鸿楷.

79. Near-Infrared Photoluminescence with Different Excitation Intensity of Heteroepitaxial GaAs Layers Grown on Si Substrates[J].

引用该论文 高瑛,赵家龙,刘学彦,苏锡安,梁家昌,高鸿楷,龚平,王海滨.

80. Modulated Photoluminescence of Ge Quantum Dots Grown on SOI Substrate

微腔调制常温Ge量子点光致发光特性